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| BCW33LT1G General Purpose Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2), TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit SOT-23 (TO-236AB) CASE 318 STYLE 6 MARKING DIAGRAM D3 M G G D3 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device BCW33LT1G BCW33LT3G Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 4 1 Publication Order Number: BCW33LT1/D BCW33LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100C) ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base -Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Cobo NF - - 4.0 10 pF dB hFE 420 VCE(sat) VBE(on) - 0.55 800 Vdc 0.25 Vdc 0.70 - V(BR)CEO V(BR)CBO V(BR)EBO ICBO 32 32 5.0 - - - Vdc Vdc Vdc Symbol Min Max Unit - - 100 10 nAdc mAdc EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% +10.9 V 10 k 275 10 < t1 < 500 ms DUTY CYCLE = 2% 0 + 3.0 V t1 +10.9 V 10 k 275 - 0.5 V <1.0 ns CS < 4.0 pF* - 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 BCW33LT1G TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 20 IC = 1.0 mA e n, NOISE VOLTAGE (nV) 300 mA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 mA 10 mA IC = 1.0 mA 300 mA 100 mA BANDWIDTH = 1.0 Hz RS 10 7.0 5.0 10 mA 3.0 100 mA 30 mA Figure 3. Noise Voltage Figure 4. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25C) 500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) BANDWIDTH = 1.0 Hz 2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k Figure 5. Narrow Band, 100 Hz 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 NF + 20 log10 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz Noise Figure is defined as: en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) IC, COLLECTOR CURRENT (mA) Figure 7. Wideband http://onsemi.com 3 BCW33LT1G TYPICAL STATIC CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) BCW33LT1 TJ = 25C 100 0.8 IC = 1.0 mA 10 mA 50 mA TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% IB = 500 mA 400 mA 300 mA 0.6 100 mA 60 200 mA 40 100 mA 20 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 8. Collector Saturation Region Figure 9. Collector Characteristics TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 0.8 *APPLIES for IC/IB hFE/2 25C to 125C 0 *qVC for VCE(sat) - 55C to 25C - 0.8 25C to 125C - 1.6 qVB for VBE - 2.4 0.1 0.2 - 55C to 25C 50 100 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts t, TIME (ns) VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Turn-On Time Figure 13. Turn-Off Time http://onsemi.com 4 BCW33LT1G TYPICAL DYNAMIC CHARACTERISTICS f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V 5.0 10 7.0 Cib TJ = 25C f = 1.0 MHz Cob 3.0 2.0 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 14. Current-Gain -- Bandwidth Product r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 P(pk) 0.02 0.01 t1 SINGLE PULSE Figure 15. Capacitance D = 0.5 0.2 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 16. Thermal Response 104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 16 by the steady state value RqJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 16A. http://onsemi.com 5 BCW33LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 BCW33LT1/D |
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